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AMAT 0050-32172

Product Name: CMP Polishing Pad and Retaining Ring Kit Product Introduction: This kit includes consumable components for Applied Materials' Mirra or Reflexion Chemical Mechanical Planarization (CMP) systems. The kit typically consists of a polyurethane polishing pad (often with a fixed-abrasive or slurry-based surface) and a retaining ring made of a composite material. The pad provides the mechanical abrasion while the retaining ring holds the wafer against the pad to ensure uniform material removal across the entire wafer surface.

AMAT 3700-03788

Product Name: Inductively Coupled Plasma (ICP) Source Coil Assembly for Etch Systems Product Introduction: This part is a major sub-assembly for Applied Materials' Kiyo or Flex系列 Etch products. It is the ICP source module (often called the "Top Source" or "Coil Box") that generates high-density plasma for high-aspect-ratio etching. The assembly includes the RF antenna coil, dielectric window, and matching network components. It is responsible for dissociating process gases into reactive radicals and ions to etch silicon, metals, or dielectrics with high anisotropy. Technical Specifications:

  • RF Frequency: Operates at standard ICP frequencies (e.g., 13.56 MHz or 27 MHz) with power capabilities up to 3000W-5000W.

AMAT 0021-55107

Product Name: Precision Gas Delivery Showerhead for Chemical Vapor Deposition (CVD) Product Introduction: This component is a precision-engineered showerhead assembly used in Applied Materials' Producer or Centura CVD systems. It serves as the top electrode and gas distribution manifold in a capacitively coupled plasma reactor. The showerhead controls the injection of process gases (precursors) into the reaction chamber, ensuring uniform mixing and laminar flow before the gases react to form a thin film on the wafer surface.

AMAT 0100-00195

Product Name: Advanced Sputtering Target Assembly for Physical Vapor Deposition (PVD) Systems Product Introduction: This component is a critical spare part designed for Applied Materials' Endura series or similar PVD platforms. It functions as the source material (target) which is bombarded by ions to eject atoms that then deposit onto a semiconductor wafer. This specific part number typically refers to a specialized target assembly, often involving complex bonding interfaces for thermal management and structural integrity during high-power sputtering processes. It is engineered for the deposition of conductive barrier layers or seed layers in copper interconnect fabrication.

AMAT 0021-01996

Product Name: Sputtering Target Assembly (Bonded Type) Product Introduction: This is the source material for Physical Vapor Deposition (PVD). The target is the material that is bombarded by ions, causing atoms to be ejected (sputtered) and deposited onto the wafer. This specific part number likely refers to a "bonded" target, where a thin layer of the expensive functional material (e.g., Copper, Tantalum) is bonded to a backing plate (usually Copper or Aluminum) using a diffusion bonding or soldering process. The backing plate provides structural support and acts as a heat sink to prevent the target from melting during high-power sputtering.

AMAT 0020-19643

Product Name: RF Match Network for CCP (Capacitively Coupled Plasma) Product Introduction: This is a specialized RF impedance matching unit designed for Capacitively Coupled Plasma (CCP) systems, often used in etch and CVD chambers. Unlike PVD match networks, CCP matches often deal with higher capacitance loads and different plasma ignition characteristics. This unit ensures efficient power transfer from the RF source (typically 13.56 MHz, 60 MHz, or dual-frequency) to the plasma electrodes (showerhead and pedestal). It is crucial for controlling ion energy distribution and plasma density independently in dual-frequency systems.

AMAT 0150-76757

Product Name: Dielectric Focus Ring for Plasma Etch Product Introduction: This component is a consumable ring placed around the perimeter of the wafer on the electrostatic chuck in plasma etch chambers. It is typically made of a dielectric material like Silicon, Silicon Carbide, or Quartz. Its primary function is to shape the plasma sheath and electric field lines at the wafer edge, ensuring that the etch rate and profile at the edge match the center of the wafer. It protects the chuck edge from sputtering and helps control the "edge roll-off" effect. Technical Specifications:

  • Material: Single-crystal Silicon, Polycrystalline Silicon, Silicon Carbide (SiC), or Fused Quartz (SiO2).

AMAT 0020-26313

Product Name: 50 Ohm Coaxial RF Power Cable Assembly Product Introduction: This is a high-power transmission line assembly designed to carry RF energy from the matching network or generator to the plasma coil or electrode within the process chamber. It must handle high voltages and currents while minimizing signal loss (attenuation) and reflection. The cable is engineered for flexibility to accommodate moving parts (like lift pins) while maintaining electrical integrity in a harsh environment with RF fields and magnetic interference. Technical Specifications:

  • Impedance: 50 Ohms (Nominal), strictly controlled to maintain VSWR < 1.2:1

AMAT 0040-62681

Product Name: Helium-Neon (HeNe) Reference Laser Interferometer Product Introduction: This is a precision optical metrology component used for alignment and distance measurement within semiconductor tools. The HeNe laser generates a coherent red beam (632.8 nm) with exceptional stability. It is used in interferometry systems to measure wafer position, focus height, and robot arm positioning with sub-micron accuracy. The unit typically includes the laser tube, power supply, optics (mirrors, beam splitters), and detectors. It ensures that the wafer is positioned exactly at the focal point of the processing optics or within the plasma sheath.

AMAT 0010-53873

Product Name: High-Vacuum Pneumatic Gate Valve Product Introduction: This is a critical isolation valve used in vacuum processing systems to separate the process chamber from the vacuum pump stack or transfer modules. It utilizes a pneumatic actuator to open and close a gate or butterfly valve mechanism. The design focuses on minimal outgassing, high conductance (to allow fast pumping), and the ability to hold a high vacuum (10-7 to 10-9 Torr) when closed. It is a key component for maintaining process integrity and enabling maintenance without breaking the vacuum in adjacent chambers.

AMAT 0020-28158

Product Name: High-Precision Digital Mass Flow Controller (MFC) Product Introduction: This device is a critical component of the Gas Delivery System (GDS) in semiconductor manufacturing equipment.114. It is designed to measure and control the flow of process gases with extremely high accuracy and repeatability. The MFC uses thermal mass flow sensing technology to measure the flow rate and a proportional control valve to regulate it. This specific unit is engineered for corrosive and non-corrosive gases, ensuring that the precise stoichiometry required for thin-film deposition and etching is maintained. It features digital communication for real-time monitoring and closed-loop control.

AMAT 0140-12305

Product Name: Single-Crystal Silicon Carbide (SiC) Wafer Clamping Ring Product Introduction: This is a high-precision consumable component used in conjunction with Electrostatic Chucks (ESC) to secure the wafer during high-temperature processing. Unlike standard aluminum or anodized aluminum rings, this component is fabricated from single-crystal Silicon Carbide (SiC), a material chosen for its exceptional hardness, high thermal conductivity, and chemical inertness. It prevents wafer slippage, ensures uniform heat transfer from the chuck to the wafer, and defines the "edge exclusion" zone where no film is deposited, which is critical for subsequent lithography and CMP steps.