Digital guide
You are here:
AMAT 0040-20124
Product Name: Vacuum Chamber Liner and Shielding Kit
Product Introduction:
This kit consists of the consumable internal shielding components of a process chamber (e.g., for Etch or CVD). The “Liner” is the cylindrical wall coating that protects the main chamber body (usually stainless steel) from corrosive plasma byproducts and sputtering. The “Shield” covers the top and bottom areas. These parts are sacrificial; they are coated with film over time and must be cleaned or replaced periodically to prevent particle fall-off and electrical arcing.
Technical Specifications:
- Material: Anodized Aluminum, Yttrium (Y), or Silicon Carbide (SiC) coated graphite for extreme resistance.
Detailed content
- Coating: Often pre-coated with a “seasoning” layer (e.g., Y2O3 or Al2O3) to match the process chemistry.
- Thickness: Designed to withstand thermal cycling and physical sputtering for a set number of wafer cycles.
- Geometry: Specific to the chamber configuration (e.g., G3 chamber, Kiyo chamber).
- Surface Finish: Low-roughness finish to minimize particle adhesion.
Functional Features:
- Plasma Confinement: Helps shape the plasma density and protects the vacuum vessel.
- Contamination Control: Traps impurities and prevents them from redepositing on the wafer.
- Grounding Path: Provides a controlled electrical ground path to prevent floating potentials and arcing.
- Gettering: Certain materials (like Titanium or Yttrium) act as getters to absorb oxygen, nitrogen, or moisture, improving vacuum quality.
- Easy Replacement: Designed as modular kits for quick “Preventive Maintenance” (PM) to restore tool performance.
Application Scenarios:
- Oxide Etch: Protecting the chamber from fluorine-based chemistry byproducts.
- Metal Etch: Shielding against metal sputter redeposition.
- Nitride Deposition: Preventing buildup on chamber walls which could flake off later.
- High-k Deposition: Maintaining chamber cleanliness for sensitive gate oxide processes.
- Chamber Matching: Using specific liners to “tune” the process (e.g., changing the chamber volume slightly to alter pressure dynamics).
