Digital guide
You are here:
AMAT 0020-21104
Product Name: RF Generator and Match Network Sub-Assembly
Product Introduction:
This part number refers to a critical RF power delivery component used across various Applied Materials platforms (Etch, CVD, PVD). It typically comprises the RF Generator (solid-state or tube-based) and the Automatic Match Network (AMN). The system generates the radio frequency energy required to create and sustain plasma within the process chamber and ensures maximum power transfer by dynamically matching the impedance of the plasma load to the generator.
Technical Specifications:
- Frequency Range: Covers standard industrial frequencies (2 MHz, 13.56 MHz, 27 MHz, 40 MHz, 60 MHz) and VHF bands.
Detailed content
- Power Output: Ranges from 300W for small sources to 5000W+ for high-density etch sources.
- Topology: Solid-state transistor (LDMOS/GaN) architecture for fast tuning and precise control; Tube (Triode) for high-power, high-voltage applications.
- Harmonics Control: Built-in filters to suppress harmonic distortion.
- Response Time: Match network tuning speed typically <100ms to handle transient plasma loads.
Functional Features:
- Plasma Stability: Maintains a stable plasma state even as process conditions (gas flow, pressure) change rapidly.
- Reflected Power Protection: Active protection circuits shut down or fold back power if reflected power exceeds safe limits to prevent generator damage.
- Digital Control: Ethernet/RS-232 interface for remote control and recipe integration with the tool controller.
- Multi-Frequency Capability: Some advanced units can deliver dual or triple frequencies simultaneously to control ion energy and density independently.1.
- High Efficiency: Solid-state designs offer high electrical-to-RF conversion efficiency, reducing utility costs and heat load.
Application Scenarios:
- Sputter Deposition: Powering the cathode target for PVD processes.
- Plasma Etch: Powering the ICP coil (source) and the electrostatic chuck (bias) for anisotropic etching.
- PECVD: Powering the showerhead to dissociate precursor gases.
- Ion Implantation: Used in plasma immersion ion implantation (PIII) for doping.
- Ash/Strip: High-power RF generation for photoresist stripping using oxygen plasma.
