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AMAT 0040-20124

Product Name: Vacuum Chamber Liner and Shielding Kit Product Introduction: This kit consists of the consumable internal shielding components of a process chamber (e.g., for Etch or CVD). The "Liner" is the cylindrical wall coating that protects the main chamber body (usually stainless steel) from corrosive plasma byproducts and sputtering. The "Shield" covers the top and bottom areas. These parts are sacrificial; they are coated with film over time and must be cleaned or replaced periodically to prevent particle fall-off and electrical arcing. Technical Specifications:

  • Material: Anodized Aluminum, Yttrium (Y), or Silicon Carbide (SiC) coated graphite for extreme resistance.

AMAT 0020-78186

Product Name: Electrostatic Chuck (ESC) with Heater and Gas Channel Assembly Product Introduction: This is a core consumable/component for Applied Materials' Producer, Centura, and Endura platforms. The Electrostatic Chuck (ESC) is the "platform" inside the vacuum chamber where the wafer sits. It uses high-voltage electrostatic force (Johnsen-Rahbek effect) to clamp the wafer firmly in place. It also incorporates a backside helium cooling system, resistive heaters for wafer temperature control, and often lift pins for wafer transfer. Technical Specifications:

  • Clamping Voltage: High voltage DC (typically 500V to 2000V) applied via a dielectric layer.

AMAT 3300-07824

Product Name: Optical Endpoint Detection System Module Product Introduction: This component is part of the Applied Materials metrology or process control suite, often found in Etch or CMP tools. It is an optical emission spectroscopy (OES) or laser interferometry system used for "Endpoint Detection." The system monitors the light emitted by the plasma or the interference pattern of a laser beam reflecting off the wafer surface to determine exactly when a specific layer has been completely etched or polished away. Technical Specifications:

  • Sensor Type: CCD array spectrometer or high-speed photodiodes.

AMAT 0020-21104

Product Name: RF Generator and Match Network Sub-Assembly Product Introduction: This part number refers to a critical RF power delivery component used across various Applied Materials platforms (Etch, CVD, PVD). It typically comprises the RF Generator (solid-state or tube-based) and the Automatic Match Network (AMN). The system generates the radio frequency energy required to create and sustain plasma within the process chamber and ensures maximum power transfer by dynamically matching the impedance of the plasma load to the generator. Technical Specifications:

  • Frequency Range: Covers standard industrial frequencies (2 MHz, 13.56 MHz, 27 MHz, 40 MHz, 60 MHz) and VHF bands.

AMAT 0050-32172

Product Name: CMP Polishing Pad and Retaining Ring Kit Product Introduction: This kit includes consumable components for Applied Materials' Mirra or Reflexion Chemical Mechanical Planarization (CMP) systems. The kit typically consists of a polyurethane polishing pad (often with a fixed-abrasive or slurry-based surface) and a retaining ring made of a composite material. The pad provides the mechanical abrasion while the retaining ring holds the wafer against the pad to ensure uniform material removal across the entire wafer surface.

AMAT 3700-03788

Product Name: Inductively Coupled Plasma (ICP) Source Coil Assembly for Etch Systems Product Introduction: This part is a major sub-assembly for Applied Materials' Kiyo or Flex系列 Etch products. It is the ICP source module (often called the "Top Source" or "Coil Box") that generates high-density plasma for high-aspect-ratio etching. The assembly includes the RF antenna coil, dielectric window, and matching network components. It is responsible for dissociating process gases into reactive radicals and ions to etch silicon, metals, or dielectrics with high anisotropy. Technical Specifications:

  • RF Frequency: Operates at standard ICP frequencies (e.g., 13.56 MHz or 27 MHz) with power capabilities up to 3000W-5000W.

AMAT 0021-55107

Product Name: Precision Gas Delivery Showerhead for Chemical Vapor Deposition (CVD) Product Introduction: This component is a precision-engineered showerhead assembly used in Applied Materials' Producer or Centura CVD systems. It serves as the top electrode and gas distribution manifold in a capacitively coupled plasma reactor. The showerhead controls the injection of process gases (precursors) into the reaction chamber, ensuring uniform mixing and laminar flow before the gases react to form a thin film on the wafer surface.

AMAT 0100-00195

Product Name: Advanced Sputtering Target Assembly for Physical Vapor Deposition (PVD) Systems Product Introduction: This component is a critical spare part designed for Applied Materials' Endura series or similar PVD platforms. It functions as the source material (target) which is bombarded by ions to eject atoms that then deposit onto a semiconductor wafer. This specific part number typically refers to a specialized target assembly, often involving complex bonding interfaces for thermal management and structural integrity during high-power sputtering processes. It is engineered for the deposition of conductive barrier layers or seed layers in copper interconnect fabrication.

AMAT 0021-01996

Product Name: Sputtering Target Assembly (Bonded Type) Product Introduction: This is the source material for Physical Vapor Deposition (PVD). The target is the material that is bombarded by ions, causing atoms to be ejected (sputtered) and deposited onto the wafer. This specific part number likely refers to a "bonded" target, where a thin layer of the expensive functional material (e.g., Copper, Tantalum) is bonded to a backing plate (usually Copper or Aluminum) using a diffusion bonding or soldering process. The backing plate provides structural support and acts as a heat sink to prevent the target from melting during high-power sputtering.

AMAT 0020-19643

Product Name: RF Match Network for CCP (Capacitively Coupled Plasma) Product Introduction: This is a specialized RF impedance matching unit designed for Capacitively Coupled Plasma (CCP) systems, often used in etch and CVD chambers. Unlike PVD match networks, CCP matches often deal with higher capacitance loads and different plasma ignition characteristics. This unit ensures efficient power transfer from the RF source (typically 13.56 MHz, 60 MHz, or dual-frequency) to the plasma electrodes (showerhead and pedestal). It is crucial for controlling ion energy distribution and plasma density independently in dual-frequency systems.

AMAT 0150-76757

Product Name: Dielectric Focus Ring for Plasma Etch Product Introduction: This component is a consumable ring placed around the perimeter of the wafer on the electrostatic chuck in plasma etch chambers. It is typically made of a dielectric material like Silicon, Silicon Carbide, or Quartz. Its primary function is to shape the plasma sheath and electric field lines at the wafer edge, ensuring that the etch rate and profile at the edge match the center of the wafer. It protects the chuck edge from sputtering and helps control the "edge roll-off" effect. Technical Specifications:

  • Material: Single-crystal Silicon, Polycrystalline Silicon, Silicon Carbide (SiC), or Fused Quartz (SiO2).

AMAT 0020-26313

Product Name: 50 Ohm Coaxial RF Power Cable Assembly Product Introduction: This is a high-power transmission line assembly designed to carry RF energy from the matching network or generator to the plasma coil or electrode within the process chamber. It must handle high voltages and currents while minimizing signal loss (attenuation) and reflection. The cable is engineered for flexibility to accommodate moving parts (like lift pins) while maintaining electrical integrity in a harsh environment with RF fields and magnetic interference. Technical Specifications:

  • Impedance: 50 Ohms (Nominal), strictly controlled to maintain VSWR < 1.2:1