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AMAT 0021-42306

Product Introduction:
This part is a fluid handling component used in the gas delivery system (Gas Box) of Applied Materials tools. A Mass Flow Controller (MFC) precisely measures and controls the flow rate of a specific process gas (precursor or carrier gas) entering the chamber. This specific part number likely refers to a high-precision MFC module, potentially for reactive or corrosive gases, featuring digital communication and closed-loop control.

Technical Specifications:

  • Flow Range: Various ranges available (e.g., 10 sccm, 100 sccm, 1000 sccm, 5 slm) depending on the gas and process.
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Detailed content

  • Accuracy: High precision, typically ±1% of reading or better (±0.5% of full scale).
  • Repeatability: ±0.2% of full scale.
  • Gas Compatibility: Wetted parts made of 316L Stainless Steel (SS), Hastelloy, or Nickel for corrosive gases (Cl2, WF6, BCl3).
  • Control Interface: Analog (0-5V) or Digital (DeviceNet, Profibus, Ethernet/IP) communication with the tool controller.
  • Pressure Rating: Designed to operate at inlet pressures up to 100-150 psig.

Functional Features:

  • Closed-Loop Control: Uses a thermal sensor and control valve to maintain set flow regardless of downstream pressure fluctuations.
  • Multi-Gas/Multi-Range: Some advanced MFCs can handle multiple gases with different calibration curves.
  • Leak Tightness: High-integrity seals (VCR or metal gasket face seals) to prevent hazardous gas leaks.
  • On-Board Diagnostics: Monitors valve health, sensor drift, and communication errors.
  • Fast Response: Fast valve actuation for rapid gas switching in multi-step processes (e.g., ALD or pulsed CVD).

Application Scenarios:

  • Atomic Layer Deposition (ALD): Critical for pulsing precise doses of precursors (e.g., TMA, H2O) for monolayer control.
  • Doping Processes: Precise flow of dopant gases (e.g., PH3, AsH3, BF3) for ion implantation or epitaxy.
  • Etch Processes: Controlling the ratio of etchant gases (e.g., CF4/Ar, Cl2/HBr) to tune selectivity and profile.
  • CVD/PVD: Regulating carrier gas (Ar, N2) and reactive gas (SiH4, NH3) flows.
  • Clean/Purge: Controlling N2 or Ar flow for chamber purging and venting.

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