ABB 5SHX1445H0001 Integrated Gate-Commutated Thyristor (IGCT) Power Module
Technical Specifications:
- Type: Press-pack thyristor
- Repetitive Peak Off-State Voltage (V DRM): Up to 8500 V
- Average On-State Current (I TAV): 1445 A at specified cooling conditions
- Non-repetitive Peak On-State Current (I TM): High surge current capability for fault tolerance
- Critical Rate of Rise of Off-State Voltage (dv/dt): High immunity to voltage transients
- Turn-Off Time (t q): Optimized for high-frequency switching applications
- Package: Press-pack design suitable for direct cooling in stacked configurations
- Isolation: Ceramic-insulated, designed for high electrical insulation and thermal performance











