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AMAT 3300-11385

  • Product Introduction: This automated robot arm is a key element in semiconductor wafer handling systems. It is designed to precisely and rapidly move semiconductor wafers between different processing stations within a semiconductor fab, such as from load ports to process chambers and between different chambers during multi - step processes. Its high - precision operation and reliability are crucial for maintaining high production yields and minimizing wafer damage.
  • Technical Specifications:
    • Degrees of Freedom: Typically has multiple degrees of freedom, usually 4 - 6, which allow it to move in the X, Y, and Z directions as well as rotate around different axes.

AMAT 0020-34362

  • Product Introduction: This component is a vital part of semiconductor process chambers, which are the core areas where various semiconductor manufacturing processes such as chemical vapor deposition (CVD), physical vapor deposition (PVD), and etching take place. It is engineered to withstand extreme process conditions, including high temperatures, high - pressure differentials, and corrosive chemical environments, ensuring the stability and reliability of the entire semiconductor manufacturing process.
  • Technical Specifications:
    • Material: Constructed from high - purity, corrosion - resistant alloys such as Hastelloy or special stainless steels.

AMAT 0010-07409

Product Introduction: This is a high-frequency RF power supply designed to deliver precise amounts of RF energy into the plasma process chamber. It converts utility power into RF energy at specific frequencies (e.g., 13.56 MHz, 2 MHz, 60 MHz, or 27 MHz). Modern units are solid-state, offering high efficiency and fast control. Technical Specifications:

  • Type: Solid State Amplifier (SSA) or Tube-based (Triode/Tetrode).

AMAT 0010-00015

Product Introduction: This part number typically refers to a comprehensive kit of consumable spare parts required for the preventive maintenance (PM) of a specific process chamber. It ensures that all wear-prone components are replaced simultaneously to restore the chamber to its "as-new" performance specifications.1. Kit Contents (Typical):

  • Showerhead: Gas distribution plate.1.
  • Liner: Chamber wall shield.

AMAT 64-81813-00

Product Introduction: This is a high-precision heating assembly, often integrated into the electrostatic chuck or wafer pedestal. It uses resistive heating elements embedded within a ceramic body (usually Aluminum Nitride for high thermal conductivity) to heat the wafer to processing temperatures ranging from room temperature to several hundred degrees Celsius. Technical Specifications:

  • Core Material: Aluminum Nitride (AlN) or Alumina.1.

AMAT 0050-81422

Product Introduction: The Electrostatic Chuck is the heart of the wafer handling system in plasma processors. It holds the wafer securely in place using electrostatic force (Johnsen-Rahbek or Coulomb force) generated by high voltage DC. It also typically incorporates a helium backside cooling system to control the wafer temperature during high-power processing. Technical Specifications:

  • Type: Johnsen-Rahbek (JR) or Coulomb.
  • Material: Aluminum Nitride (AlN) or Alumina (Al2O3) ceramic.

AMAT 0140-20183

Product Introduction: The Chamber Liner is a replaceable protective shell that lines the interior walls of the vacuum chamber. It protects the expensive main chamber body (usually stainless steel) from plasma sputtering, chemical corrosion, and thermal stress. Liners also act as a ground plane and can influence plasma uniformity. Technical Specifications:

  • Material: Anodized Aluminum, Yttrium (Y2O3) coated Aluminum, or Quartz 1.

AMAT 0190-27350

Product Introduction: The Lift Pin Assembly is a mechanical subsystem located within the wafer support pedestal (susceptor). It consists of pins that move vertically to lift the wafer off the pedestal surface, facilitating robotic handoff and cooling. This mechanism ensures the wafer does not stick to the pedestal due to vacuum chucking or thermal bonding. Technical Specifications:

  • Number of Pins: Typically 3 to 6 pins (e.g., 3-pin configuration for stability).

AMAT 3020-01085

Product Introduction: The Throttle Valve is a precision vacuum control device located between the process chamber and the vacuum pump. It regulates the chamber pressure by adjusting the aperture size of the orifice. This component is vital for controlling the mean free path of gas molecules, which directly affects plasma density, etch rate, and anisotropy. Technical Specifications:

  • Type: Pneumatic or Electric butterfly valve / Poppet valve.1.

AMAT 0020-22296

Product Name: Edge Ring / Focus Ring Product Introduction: The Edge Ring is a consumable or semi-permanent component installed at the periphery of the wafer pedestal in an etch or deposition chamber. It protects the chamber walls from plasma erosion and controls the plasma sheath profile at the wafer edge, preventing edge exclusion and ensuring uniform processing across the entire wafer surface, including the bevel area. Technical Specifications:

  • Material: Silicon (Si), Silicon Carbide (SiC), Quartz, or Yttria-coated Aluminum.1.

AMAT 3920-00238

Product Name: RF Impedance Matching Network (Matchbox) Product Introduction: This is a sophisticated RF matching network designed to maximize power transfer between the RF generator and the plasma load. It automatically tunes the impedance to ensure that reflected power is minimized, protecting the generator and ensuring process stability. This unit is a core component of the RF delivery system in plasma processing tools. Technical Specifications:

  • Frequency Range: 13.56 MHz (standard) or dual frequency (e.g., 2 MHz and 60 MHz).

AMAT 0021-86050

Product Name: Gas Distribution Assembly / Showerhead Electrode Product Introduction: This component is a critical part of the plasma processing chamber, specifically designed for semiconductor etch and deposition applications. It serves as the upper electrode and gas distribution system, ensuring uniform delivery of process gases into the plasma zone. The assembly is engineered to withstand harsh chemical environments and high thermal loads while maintaining precise plasma density control. Technical Specifications:

  • Material: Aluminum alloy with anodized coating or specialized ceramic (Al2O3/Y2O3) depending on process chemistry.