AMAT 0010-07409
Product Introduction:
This is a high-frequency RF power supply designed to deliver precise amounts of RF energy into the plasma process chamber. It converts utility power into RF energy at specific frequencies (e.g., 13.56 MHz, 2 MHz, 60 MHz, or 27 MHz). Modern units are solid-state, offering high efficiency and fast control.
Technical Specifications:
- Type: Solid State Amplifier (SSA) or Tube-based (Triode/Tetrode).
Detailed content
- Frequency: 13.56 MHz (Standard), 2 MHz (High Density), or Multi-frequency.
- Power Output: 500W, 1000W, 2000W, 5000W, or 10kW+.
- Efficiency: >85% for solid-state units.
- Control: Digital interface (RS-232, Ethernet) for remote control.
- Harmonics: Low harmonic distortion to prevent interference with other factory equipment.1.
Functional Features:
- Fast Matching: Integrates with the match network for sub-second tuning.
- Pulse Modulation: Capable of pulsing RF power for specific process recipes (e.g., to control ion energy).
- Ignition: Provides the initial high-voltage strike to ignite the plasma.
- Protection: Over-current, over-voltage, and high reflected power protection circuits.
- Remote Plasma Source (RPS): Some variants generate plasma remotely to reduce ion damage.
Application Scenarios:
- Plasma Generation: Primary power source for all plasma etch and deposition tools.
- Sputtering: Powers the target in PVD chambers.
- PECVD: Powers the electrodes to dissociate precursor gases.
- Ashing: High-power RF for photoresist removal.
- Main Equipment: Applied Materials RFX, ASX, and other RF generator families used in Centura, Endura, and Producer tools.









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