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AMAT 0010-07409

Product Introduction:
This is a high-frequency RF power supply designed to deliver precise amounts of RF energy into the plasma process chamber. It converts utility power into RF energy at specific frequencies (e.g., 13.56 MHz, 2 MHz, 60 MHz, or 27 MHz). Modern units are solid-state, offering high efficiency and fast control.

Technical Specifications:

  • Type: Solid State Amplifier (SSA) or Tube-based (Triode/Tetrode).

Detailed content

  • Frequency: 13.56 MHz (Standard), 2 MHz (High Density), or Multi-frequency.
  • Power Output: 500W, 1000W, 2000W, 5000W, or 10kW+.
  • Efficiency: >85% for solid-state units.
  • Control: Digital interface (RS-232, Ethernet) for remote control.
  • Harmonics: Low harmonic distortion to prevent interference with other factory equipment.1.

Functional Features:

  • Fast Matching: Integrates with the match network for sub-second tuning.
  • Pulse Modulation: Capable of pulsing RF power for specific process recipes (e.g., to control ion energy).
  • Ignition: Provides the initial high-voltage strike to ignite the plasma.
  • Protection: Over-current, over-voltage, and high reflected power protection circuits.
  • Remote Plasma Source (RPS): Some variants generate plasma remotely to reduce ion damage.

Application Scenarios:

  • Plasma Generation: Primary power source for all plasma etch and deposition tools.
  • Sputtering: Powers the target in PVD chambers.
  • PECVD: Powers the electrodes to dissociate precursor gases.
  • Ashing: High-power RF for photoresist removal.
  • Main Equipment: Applied Materials RFX, ASX, and other RF generator families used in Centura, Endura, and Producer tools.

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