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AMAT 0021-86050
Product Name: Gas Distribution Assembly / Showerhead Electrode
Product Introduction:
This component is a critical part of the plasma processing chamber, specifically designed for semiconductor etch and deposition applications. It serves as the upper electrode and gas distribution system, ensuring uniform delivery of process gases into the plasma zone. The assembly is engineered to withstand harsh chemical environments and high thermal loads while maintaining precise plasma density control.
Technical Specifications:
- Material: Aluminum alloy with anodized coating or specialized ceramic (Al2O3/Y2O3) depending on process chemistry.
Detailed content
- Diameter: Typically matches chamber size (e.g., 200mm or 300mm wafer capability).
- Gas Inlets: Multiple precision-drilled orifices for uniform gas flow.
- RF Power: Capable of handling high-frequency RF power (typically 13.56 MHz or higher).
- Thermal Control: Integrated cooling channels for temperature regulation.
Functional Features:
- Uniform Plasma Generation: The showerhead design ensures even gas distribution, leading to consistent etch rates and film deposition across the wafer.
- In-situ Cleaning Compatibility: Resistant to corrosive plasma cleaning chemistries (e.g., NF3, CF4).
- Precision Tuning: Allows for adjustment of gas flow rates and pressure to optimize process recipes.
- Electrode Function: Acts as the powered electrode to ignite and sustain the plasma discharge.
Application Scenarios:
- Semiconductor Etching: Used in capacitively coupled plasma (CCP) etch chambers for dielectric and metal etching.1.
- PECVD (Plasma Enhanced Chemical Vapor Deposition): Used for depositing thin films such as silicon nitride, silicon oxide, and amorphous silicon.
- Photoresist Strip: High-power plasma ashing processes.
- Main Equipment: Applied Materials Centura Etch systems, DxZ Etch products.
