Maximum Collector Emitter Voltage (V):1250 V

Maximum Continuous Collector Current (A):400 A

Mounting Type:Screw Mount

Pin Count:12

Dimensions (mm):105 x 45 x 24

Configuration:3 Phase Bridge

Maximum Gate Emitter Voltage (V):±20 V

Channel Type:N

Series:Extended Product Type

Product ID:SKM400GB125D

GE Type Designation:Other

Weight (kg):0.14

    Engineered for optimal performance in demanding industrial environments, the SEMIKRON SKM400GB125D IGBT Transistor Modules offer superior reliability and efficiency.

    Featuring advanced semiconductor technology, these modules are capable of handling high collector emitter voltages and currents, making them ideal for complex power conversion tasks.

    With a robust screw mount design, these modules ensure secure installation and easy integration into existing systems, minimizing downtime and maximizing operational stability.

    The compact dimensions of 105 x 45 x 24 mm make them highly space-efficient, suitable for both new installations and retrofits in tight spaces.

    Offering flexibility in configuration through its 3 Phase Bridge design, these modules can be tailored to various industrial applications, enhancing system performance and compatibility.

    Built with precision and durability, SEMIKRON SKM400GB125D IGBT Transistor Modules deliver consistent operation under varying conditions, ensuring reliable power management in critical operations.