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GE 6KP1123075X9B1
Product Name: GE 6KP Series 6-Pulse Thyristor (SCR) Power Module
Product Introduction: A high-power silicon-controlled rectifier module for industrial power electronic conversion, used in rectifiers, variable-frequency drives, soft starters, and DC drive systems for power transformation.
Technical Specifications:
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Module Type: 6-pulse thyristor bridge (three-phase full-controlled bridge)
Detailed content
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Repetitive Peak Voltage (VRRM): 1200 V
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Average Forward Current (IT(AV)): 75 A
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On-state Voltage Drop (VTM): Typ. 1.5 V @ 75 A
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Surge Current (ITSM): 900 A (half-wave, 8.3 ms)
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dv/dt Withstand: 1000 V/μs
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di/dt Withstand: 200 A/μs
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Junction Temperature Range: –40 °C to +125 °C
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Insulation Voltage: 2500 V AC (1 minute)
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Terminal Form: Bolt connection (M8 bolts)
Material & Construction:
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Chip Material: Silicon (Si) high-power thyristor chips
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Package: Press-pack, double-sided water-cooled structure
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Packaging Materials: Ceramic substrate + molybdenum plate + copper electrodes
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Housing: Stainless steel + insulating ceramic
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Topology: 6 thyristor chips arranged in three-phase full-bridge configuration
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Integrated Snubber: RC snubber circuit built-in
Working Principle: Three-phase AC passes through the 6-thyristor full-controlled bridge for rectification; the output DC voltage is regulated by controlling the gate firing angle α.
Application Scenarios: Large VFD drives, DC motor speed regulation, electrolytic plating power supplies, UPS rectification, wind power converters.
Installation Requirements:
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Coolant Flow: ≥ 2 L/min, water temperature ≤ 40 °C
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Water Quality: De-ionized or distilled water, resistivity ≥ 1 MΩ·cm
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Bolt Torque: 15 N·m (M8 bolts)
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Apply thermal conductive grease between module and heat sink.
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Mount on standard heat sink using insulated spacer holes at module base.
Usage Notes: Ensure continuous coolant flow during operation. Monitor junction temperature. Verify gate drive signals are correctly phased.
