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Gasonics R95-3009 RF Power Supply
Introduction:
The Gasonics R95-3009 is an RF (Radio Frequency) power supply or generator module. The “R” prefix typically denotes a Rack-mounted or Reflected-power protected unit, while the “95” series suggests it is part of a specific generation of Gasonics power hardware. This device generates the electromagnetic energy required to create and sustain plasma within a process chamber.
Technical Specifications:
- Type: Solid State RF Generator (likely L-Band or 13.56 MHz variant)
Detailed content
- Output Frequency: 13.56 MHz (Standard ISM band) or 2 MHz – 60 MHz (Tunable)
- Output Power: 1000 Watts to 3000 Watts (Typical range for this form factor)
- Output Impedance: 50 Ohms (Nominal)
- Harmonic Distortion: < -60 dBc
- Cooling Method: Forced Air (Internal fans with filter)
- Input Power: 208VAC or 480VAC, 3-Phase
- Control Interface: RS-232, RS-485, or Ethernet (TCP/IP)
Functional Features:
- Automatic Impedance Matching: Integrates or interfaces with a match network to minimize reflected power (VSWR < 1.5:1).
- Plasma Ignition: Features a high-voltage strike circuit to initiate plasma discharge at low pressures.
- Arc Detection & Suppression: Fast-acting circuitry detects RF arcing and cuts power within microseconds to prevent chamber damage.
- Analog Modulation: Supports 0-10V or 4-20mA external modulation for power level control.
- Soft Start/Stop: Gradual ramping of power to prevent thermal shock to the load and generator.
Application Scenarios:
- Reactive Ion Etching (RIE): Providing the energy to dissociate gases and accelerate ions toward the wafer.
- Plasma Enhanced CVD (PECVD): Generating plasma to lower deposition temperatures and improve film quality.
- Sputtering (PVD): Creating high-density plasma to eject target material onto the substrate.
- Photoresist Ashing: Using oxygen plasma to strip photoresist after lithography or implantation.
- Surface Treatment: Plasma cleaning or activation of wafer surfaces to improve adhesion.
