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Gasonics PEP-3600 Plasma Etch
Product Description: The PEP-3600 is a high-performance, often single-wafer, plasma processing platform designed for aggressive photoresist stripping, descumming, and surface cleaning. It is engineered for high throughput and uniformity, typically used in advanced semiconductor packaging and logic device manufacturing. It features a downstream or direct plasma source configuration.
Technical Specifications:
- System Type: Single Wafer Plasma Processing Cluster Tool
Detailed content
- Wafer Size: 200mm (8-inch) and 300mm (12-inch) compatibility
- Plasma Source: Inductively Coupled Plasma (ICP) or Transformer Coupled Plasma (TCP) options
- RF Power: High-density source (up to 3000W) and Bias power (up to 1000W)
- Process Gases: O2, H2, N2, Ar, CF4, SF6, NF3 (with abatement)
- Pressure Range: 1 mTorr to 20 Torr
- Temperature Control: Electrostatic Chuck (ESC) with He backside cooling (-20°C to +80°C)
Functional Features:
- High Throughput: Optimized cycle times for rapid photoresist removal.
- Low Damage: Capable of gentle “downstream” mode to prevent damage to sensitive low-k dielectrics or metal layers.
- Advanced Endpoint Detection: Optical Emission Spectroscopy (OES) for precise process control.
- In-situ Cleaning: Chamber clean capabilities (NF3 or F2 plasma) to minimize particle generation.
- Automation: Fully automated wafer handling with load locks and aligners.
Application Scenarios:
- Photoresist Stripping: Removing thick or hardened resist after high-dose ion implantation.
- Post-Etch Residue Removal: Removing polymer “scum” or “stringers” from via and trench etches (Descum).
- Dielectric Cleaning: Pre-metal deposition cleaning to remove native oxides and organics.
- Wafer Reclaim: Stripping multiple layers from reclaimed wafers for testing or reprocessing.
- TSV Cleaning: Cleaning Through-Silicon Vias during 3D packaging processes.
