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Gasonics MAP130-4000 Mass Flow Controller (MFC)
Introduction:
The Gasonics MAP130-4000 is a thermal mass flow controller designed for precise measurement and control of gas flow rates in semiconductor manufacturing. It utilizes the principle of thermal dispersion to measure flow, providing accurate and repeatable delivery of process gases independent of temperature and pressure fluctuations. This device is essential for maintaining process stability in deposition and etching applications.
Technical Specifications:
- Measurement Principle: Thermal Mass Flow (Constant Temperature Anemometry)
Detailed content
- Flow Range: 0 to 1000 sccm (Standard Cubic Centimeters per Minute) – Specific range depends on gas and calibration
- Accuracy: ±1% of Reading or ±0.5% of Full Scale (whichever is greater)
- Repeatability: ±0.25% of Full Scale
- Control Range: 100:1 Turndown Ratio
- Maximum Inlet Pressure: Up to 1000 PSIG (depending on model variant)
- Materials: 316L Stainless Steel body, Electropolished internal surfaces
- Electrical Interface: Analog (0-5VDC, 4-20mA) and Digital (RS-232, RS-485, or DeviceNet)
- Response Time: < 1 second (typically 100ms to 90% of setpoint)
Functional Features:
- Closed-Loop Control: Integrated control valve allows for precise adjustment of flow rate based on the setpoint signal from the host controller.
- Multi-Gas Capability: Can be calibrated for various process gases (e.g., Argon, Oxygen, Nitrogen, CF4) with correction factors stored in non-volatile memory.
- Pressure Compensation: Built-in pressure sensor compensates for line pressure variations to ensure accurate mass flow measurement.
- On-Board Diagnostics: Monitors health status, including valve drive current, sensor health, and communication errors.
- Bakeable Design: Capable of withstanding chamber bake-out temperatures up to 150°C without degradation.
Application Scenarios:
- Plasma Etching: Precisely controlling the flow of etchant gases (e.g., CF4, SF6, O2) to control etch rate and profile.
- Chemical Vapor Deposition (CVD): Delivering precise ratios of precursor gases to ensure film stoichiometry and uniformity.
- Physical Vapor Deposition (PVD): Regulating sputtering gas (Argon) flow to control plasma density and deposition rate.
- Rapid Thermal Processing (RTP): Controlling ambient gases (N2, Ar) during annealing processes.
- Cleanroom Environmental Control: Monitoring and controlling gas flows in mini-environments or clean boxes.
