• Wafer Size Compatibility: 100mm (4-inch), 150mm (6-inch), and 200mm (8-inch)
• RF Frequency: 13.56 MHz
• RF Power: 1000 Watts to 2000 Watts adjustable
• Process Gases: Oxygen (O2), Nitrogen (N2), Argon (Ar), and Fluorocarbons (CF4, C4F8)
• Pressure Range: 0.1 Torr to 10 Torr
• Temperature Range: Room temperature to 300°C (Chuck heating option)

Functional Features:

• Decoupled Plasma Source: Utilizes a remote plasma source where the plasma is generated in a quartz tube and only neutral radicals flow to the wafer, ensuring zero ion damage.
• Radial Gas Injection: Features a multi-zone gas distribution ring to ensure uniform radical density across the entire wafer surface.
• Optical Endpoint Detection: Equipped with sensors to detect the emission signature of the stripping process completion, automatically stopping the process to prevent over-ashing.
• Quartz Process Tube: Uses high-purity fused quartz for the reaction chamber to minimize contamination and allow visual monitoring.

Application Scenarios:

• Photoresist Stripping: Primary use for removing standard and high-temperature photoresists after lithography or implantation.
• Low-k Dielectric Cleaning: Safe for cleaning porous low-k materials where ion bombardment would cause structural collapse.
• Descumming: Removal of thin residual resist layers (scum) from the bottom of vias and trenches before metallization.
• Surface Activation: Used to increase surface energy of wafers or substrates prior to bonding or deposition processes.