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AMAT 9090-00115
Product Name: Endura Volta HD+ Source RF Match Network Assembly
Product Introduction: This assembly is a critical radio frequency (RF) impedance matching unit designed specifically for the Applied Materials Endura Volta HD+ Physical Vapor Deposition (PVD) system. It is engineered to maximize power transfer from the RF generator to the plasma source within the sputtering chamber. By dynamically adjusting capacitance and inductance, it ensures that the plasma ignites and sustains efficiently, minimizing reflected power which can damage sensitive RF components. This unit is integral to high-density plasma (HDP) processes used in advanced copper metallization.
Technical Specifications:
- System Compatibility: Applied Materials Endura Volta HD+ PVD Cluster Tool
Detailed content
- Function: RF Impedance Matching (Source Side)
- Frequency Range: 13.56 MHz (Standard) or 2 MHz (for bias)
- Power Handling: Up to 10 kW (continuous wave)
- Cooling Method: Forced water cooling with closed-loop temperature control
- Interface: Analog or digital control via the tool’s mainframe
Functional Features: - Dynamic Tuning: Features automatic or semi-automatic tuning algorithms to adjust matching points in real-time as plasma impedance changes during the process.
- High Stability: Utilizes vacuum variable capacitors and high-current inductors to handle fluctuating loads without arcing.
- Reflected Power Minimization: Maintains reflected power below 5% to protect the RF generator and ensure process stability.
- Process Optimization: Enables precise control over ion density and energy distribution, crucial for filling high-aspect-ratio trenches.
Application Scenarios: - Copper interconnect deposition for sub-10nm logic nodes.
- High-density plasma sputtering where precise ion bombardment is required for resputtering and sidewall coverage.
- Advanced packaging processes requiring high deposition rates with low substrate damage.
- Semiconductor manufacturing facilities focusing on high-volume production of 5nm and 3nm chips.
