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AMAT 4020-00084
Product Name: DPS II RF Match Network for Etch Systems
Product Introduction: This is an RF Match Network specifically designed for the Applied Materials Decoupled Plasma Source (DPS) II etch systems, such as the Flex or Kiyo platforms. In plasma etching, maintaining a stable plasma is crucial for anisotropic etching profiles. The match network sits between the RF generator and the plasma source coil (antenna). It matches the impedance of the generator (typically 50 ohms) to the impedance of the plasma load, which varies dynamically during the etch process.
Technical Specifications:
- System Compatibility: Applied Materials DPS II Etch Modules (e.g., Flex, Kiyo)
Detailed content
- Type: L-Type or Pi-Type Network
- Frequency: 13.56 MHz (Source) and 2 MHz (Bias)
- Components: High-voltage vacuum variable capacitors, high-current inductors
- Control: Microprocessor-controlled automatic tuning
Functional Features: - Fast Response Time: Tunes in milliseconds to adapt to changes in plasma chemistry or pressure during the etch recipe.
- Stable Plasma Ignition: Ensures reliable plasma strike without arcing, which can damage delicate device structures.
- Reflected Power Protection: Actively reduces reflected power to near zero, protecting expensive RF generators.
- Process Repeatability: Ensures that the plasma density and ion energy remain consistent wafer-to-wafer and lot-to-lot.
Application Scenarios: - High-aspect-ratio contact and via etching in dielectric materials.
- Polysilicon gate etching.
- Metal etching (Al, Cu, W) for interconnect formation.
- Advanced etching processes requiring precise control over ion flux and energy, such as cryo-etch or atomic layer etch (ALE) preparations.
