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AMAT 3700-03788
Product Name: Inductively Coupled Plasma (ICP) Source Coil Assembly for Etch Systems
Product Introduction:
This part is a major sub-assembly for Applied Materials’ Kiyo or Flex系列 Etch products. It is the ICP source module (often called the “Top Source” or “Coil Box”) that generates high-density plasma for high-aspect-ratio etching. The assembly includes the RF antenna coil, dielectric window, and matching network components. It is responsible for dissociating process gases into reactive radicals and ions to etch silicon, metals, or dielectrics with high anisotropy.
Technical Specifications:
- RF Frequency: Operates at standard ICP frequencies (e.g., 13.56 MHz or 27 MHz) with power capabilities up to 3000W-5000W.
Detailed content
- Cooling System: Requires high-flow chilled water (typically 15-20 L/min) to cool the ceramic window and copper coil.
- Dielectric Window Material: High-purity Quartz or Aluminum Nitride (AlN) for thermal shock resistance and RF transparency.
- Impedance Matching: Integrated or connected to an automatic matching network (AMN) to maintain 50-ohm impedance during plasma transitions.
- Gas Injection: May include center-feed gas injection capabilities for process tuning.
Functional Features:
- High-Density Plasma: Generates plasma densities exceeding 1012 ions/cm3, enabling fast etch rates for deep trenches.
- Independent Control: Allows independent control of Ion Density (via ICP power) and Ion Energy (via Bias power) for process flexibility.
- Uniformity Control: Multi-zone coil designs allow for tuning plasma uniformity across the wafer radius.
- Low Maintenance: Designed with replaceable window liners to protect the main dielectric from sputtering by-products.
- Process Stability: Ensures stable plasma ignition and extinction to prevent process drift.
Application Scenarios:
- Deep Silicon Etch (DRIE): Used for creating Through-Silicon Vias (TSVs) and MEMS structures with aspect ratios >20:1.
- Polysilicon Gate Etch: High-selectivity etching of polysilicon gates in transistor formation.
- Metal Etch: Etching of aluminum, copper, or tungsten layers for interconnect patterning.
- Contact and Via Etch: Opening contact holes in dielectric layers to connect different metal layers.
- Compound Semiconductors: Etching of GaN, SiC, or InP for power electronics and RF devices.
