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AMAT 3310-00282 Wafer Edge Ring Assembly
Product Overview: The AMAT 3310-00282 is a precision-engineered wafer edge ring assembly designed for Applied Materials semiconductor processing equipment. It surrounds the wafer perimeter during processing, ensuring uniform plasma distribution across the wafer surface, protecting the wafer edge from excessive etching or deposition, and preventing process contamination. Manufactured from high-purity ceramic or silicon carbide, this edge ring delivers exceptional plasma resistance, thermal stability, and dimensional accuracy for advanced wafer processing.
Technical Specifications:
- Material: 99.9% silicon carbide (SiC) or high-purity alumina (Al₂O₃), customer-specified.
Detailed content
- Dimensions: Outer diameter 320mm, inner diameter 300mm, thickness 12mm, with precision-machined edge profile.
- Surface Finish: Ground and polished to Ra ≤ 0.1μm, minimizing particle generation.
- Temperature Resistance: Continuous operating temperature up to 1200°C, short-term peak up to 1400°C.
- Plasma Resistance: Resistant to erosion from all semiconductor plasma chemistries.
- Dimensional Tolerance: ±0.005mm for inner/outer diameters, ensuring perfect wafer centering.
- Weight: 1.8kg (SiC) or 1.5kg (Al₂O₃), designed for easy installation.
- Certification: Complies with SEMI F17 ceramic component standards.
Functional Features:
- Ensures uniform plasma distribution across the entire wafer surface, eliminating edge effects.
- Protects the wafer edge from excessive processing, improving wafer yield and device performance.
- Prevents process contamination by containing plasma and process byproducts within the chamber.
- Resists plasma erosion and thermal shock, extending service life up to 8,000 process hours.
- Maintains dimensional stability under extreme thermal cycling, ensuring consistent performance.
- Integrates seamlessly with AMAT’s wafer support pedestals and chamber assemblies.
Application Scenarios:
- Installed in AMAT etch, CVD, and PVD chambers for 300mm wafer processing.
- Used in advanced logic and memory manufacturing processes (≤7nm nodes).
- Applied in processes requiring precise edge control, such as gate etching and metal deposition.
- Ideal for high-volume fabs where wafer uniformity and yield are critical.
- Deployed in R&D facilities for advanced wafer processing development.
