Digital guide
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Detailed content
- Clamping Voltage: 1–3 kV DC
- Temperature Range: 20°C to 400°C
- Temperature Uniformity: ±1°C across wafer
- Material: Aluminum nitride ceramic
- Heating Element: Embedded resistive heaters
- Vacuum Compatibility: Ultra-high vacuum rated
Functional Features:
- Secure non-mechanical wafer clamping
- Excellent thermal conductivity for uniform heating
- Rapid temperature response and stability
- Low particle generation during operation
- RF shielding capability
- Easy integration with AMAT process chambers
Application Scenarios:
- Plasma etching processes
- PVD and CVD deposition systems
- Semiconductor wafer manufacturing
- AMAT Centura and Endura platforms
- Advanced node semiconductor processing
