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AMAT 0200-11342

Product Name: Ceramic Edge Ring

Product Description: A high-purity ceramic component designed to confine the plasma and protect the wafer edge during semiconductor deposition and etching processes.

Technical Specifications:

  • Material: High-purity alumina (Al₂O₃) or Yttria-stabilized Zirconia (YSZ).

Detailed content

  • Purity: ≥ 99.6% for minimal contamination.
  • Dimensional Precision: Tight tolerances (±0.005mm) for perfect fit.
  • Surface Finish: Ra ≤ 0.4μm for low particle adhesion.

    Functional Features:

  • Plasma Confinement: Shapes the plasma sheath for uniform processing across the wafer.
  • Edge Protection: Prevents over-etching or over-deposition at the wafer perimeter.
  • Chemical Resistance: Inert to process gases (fluorocarbons, oxygen, hydrogen plasmas).
  • Thermal Stability: Excellent thermal shock resistance under rapid thermal cycling.

    Application: Primarily used in PECVD, Etch chambers (e.g., DPS II) for 200mm/300mm wafer processes.

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