AMAT 0200-11342
Product Name: Ceramic Edge Ring
Product Description: A high-purity ceramic component designed to confine the plasma and protect the wafer edge during semiconductor deposition and etching processes.
Technical Specifications:
- Material: High-purity alumina (Al₂O₃) or Yttria-stabilized Zirconia (YSZ).
Detailed content
- Purity: ≥ 99.6% for minimal contamination.
- Dimensional Precision: Tight tolerances (±0.005mm) for perfect fit.
- Surface Finish: Ra ≤ 0.4μm for low particle adhesion.
Functional Features:
- Plasma Confinement: Shapes the plasma sheath for uniform processing across the wafer.
- Edge Protection: Prevents over-etching or over-deposition at the wafer perimeter.
- Chemical Resistance: Inert to process gases (fluorocarbons, oxygen, hydrogen plasmas).
- Thermal Stability: Excellent thermal shock resistance under rapid thermal cycling.
Application: Primarily used in PECVD, Etch chambers (e.g., DPS II) for 200mm/300mm wafer processes.





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