Digital guide
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Detailed content
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- Diameter: 4.76mm ± 0.01mm
- Length: 88.9mm ± 0.05mm
- Surface Finish: Polished to Ra ≤ 0.1μm
- Temperature Resistance: Up to 1,500°C continuous
- Compressive Strength: >2,000 MPa
- Functional Features:
- Exceptional wear resistance for extended service life
- Non-porous surface prevents particle generation and contamination
- Chemical inertness to all semiconductor process gases and plasmas
- High mechanical strength to support wafer weight without deformation
- Low thermal conductivity minimizes heat transfer from wafer
- Application Scenarios:
- Used in AMAT Centura and Producer CVD chambers
- Applied in high-temperature epitaxial deposition processes
- Deployed in wafer lift systems for 200mm and 300mm wafer platforms
- Utilized in processes requiring ultra-high purity materials
- Suitable for oxide, nitride, and poly-silicon deposition applications
