Digital guide
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AMAT 0190-11567
- Product Introduction:
This gas distribution system is an essential part of semiconductor manufacturing equipment that uses process gases, such as in chemical vapor deposition, etching, and doping processes. It is responsible for accurately and uniformly distributing the process gases to the reaction chamber where the semiconductor wafer is located, ensuring consistent process results. - Technical Specifications:
- Gas Compatibility: It can handle a wide range of process gases, including corrosive gases such as hydrogen fluoride (HF)
Detailed content
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- chlorine (Cl₂), and reactive gases like silane (SiH₄) and ammonia (NH₃). The system is made of materials that are resistant to chemical corrosion, such as stainless steel 316L and special fluoropolymers.
- Flow Control Accuracy: The system can control the gas flow rate with an accuracy of ±0.5% of the set value. This high level of accuracy is necessary for processes that require precise gas – to – wafer interactions, such as atomic layer deposition (ALD).
- Number of Gas Inlets and Outlets: It has multiple gas inlets (up to 16) and outlets (up to 8) to accommodate different process gas combinations and flow requirements. Each inlet and outlet is equipped with high – quality valves for precise gas flow control.
- Functional Features:
- Gas Mixing Capability: The system can mix different process gases in precise ratios before distributing them to the reaction chamber. This is important for processes that require a specific gas mixture for optimal performance, such as in the deposition of compound semiconductor films.
- Gas Purification: It includes gas purification units that remove impurities such as moisture, oxygen, and particulates from the process gases. This ensures that the gases entering the reaction chamber are of high purity, which is crucial for obtaining high – quality semiconductor films and structures.
- Leak Detection and Prevention: The system is equipped with leak detection sensors that can quickly detect any gas leaks. In case of a leak, the system will automatically shut off the gas supply and trigger an alarm to prevent potential safety hazards and process disruptions.
- Application Scenarios:
- Atomic Layer Deposition (ALD) Systems: In ALD, where thin films are deposited one atomic layer at a time, precise gas flow control and mixing are essential. This gas distribution system ensures that the reactant gases are delivered to the wafer surface in a controlled and sequential manner, enabling the growth of high – quality and uniform thin films.
- Reactive Ion Etching (RIE) Equipment: During RIE, different process gases are used to etch specific materials on the wafer. The gas distribution system accurately distributes these gases to the etching chamber, allowing for precise control of the etching process and the formation of high – aspect – ratio features.
