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AMAT 0150-28295 Wafer Chuck Assembly (Electrostatic)
Product Introduction: This is an electrostatic chuck (ESC) for wafer clamping and temperature control in semiconductor plasma process. It uses electrostatic force to fix the wafer without mechanical pressure, realizing uniform support, efficient heat transfer and precise temperature control of the wafer, which is crucial for ensuring process uniformity, film quality and wafer flatness.
Technical Specifications:
- Applicable Wafer: 300mm silicon wafer
- Clamping Voltage: 500–2000 VDC adjustable
Detailed content
- Temperature Control Range: 20°C to 450°C
- Temperature Uniformity: ±1°C across the wafer surface
- Base Material: Aluminum nitride (AlN) ceramic with high thermal conductivity
- Clamping Force: Uniform 0.5–1.0 N/cm²
- Leakage Current: <10 μA, ensuring ESD safety
Functional Features:
- Dual-pole electrostatic clamping, stable and reliable, not affected by vacuum degree
- Built-in heating and cooling channel, realizing fast temperature response and high precision control
- Non-contact clamping, no mechanical damage, no particle generation
- High thermal conductivity ceramic, ensuring efficient heat exchange between wafer and chuck
- Resistant to plasma erosion and chemical corrosion, long service life
- Suitable for high vacuum and plasma environment
Application Scenarios:
- Plasma etching equipment for 3D NAND and advanced logic devices
- PVD coating equipment for metal gate and contact layer
- Ion implantation and wafer doping process
- Wafer annealing and thermal treatment process
- High-end semiconductor equipment requiring precise temperature control
