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AMAT 0140-12305
Product Name: Wafer Clamping Ring Assembly
Product Introduction: A precision-machined component used to secure the wafer firmly against the electrostatic chuck (ESC) during high-temperature and high-stress processing. It ensures excellent thermal transfer and prevents wafer edge lifting during plasma bombardment.
Technical Specifications:
- Material: Single-crystal Silicon Carbide (SiC) or Yttrium-coated Aluminum
- Diameter: Configured for 200mm (300mm equivalent available) standard wafer sizes
Detailed content
- Flatness: Total Indicator Reading (TIR) less than 0.002 inches to ensure uniform contact
- Thermal Conductivity: High thermal conductivity (>100 W/m-K for SiC) for efficient heat transfer
- Hardness: High Vickers hardness to resist wear from repeated mechanical contact
Functional Features: - Edge Exclusion Control: The ring design defines the “edge exclusion” zone where no film is deposited, critical for subsequent lithography and CMP steps.
- Plasma Confinement: Acts as a physical boundary to shape the plasma density profile near the wafer edge.
- Low Particle Generation: Hard coating reduces the generation of metallic particles during clamp-down cycles.
- Temperature Resistance: Maintains structural integrity under rapid thermal processing (RTP) conditions up to 800°C.
Application Scenarios: - Critical for all PVD and CVD (Chemical Vapor Deposition) processes where wafer flatness and thermal stability are paramount.
- Used in ionized metal plasma (IMP) PVD processes for seed layer deposition.
- Applied in etch chambers and rapid thermal processing (RTP) modules for wafer stabilization.
