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AMAT 0100-91086 Plasma Chamber Liner Assembly
Product Introduction: This is a high-performance plasma-resistant ceramic lining component used in the plasma process chamber. It can protect the chamber wall from plasma erosion, prevent metal pollution and particle shedding, maintain the cleanliness of the process environment, extend the maintenance period of the equipment, and is a key consumable to ensure the stability of the etching and deposition process and the yield of wafers.
Technical Specifications:
- Main Material: 99.9% high-purity alumina (Al₂O₃) ceramic
Detailed content
- Surface Coating: Yttria (Y₂O₃) plasma-resistant coating, enhancing erosion resistance
- Applicable Equipment: Matching AMAT 300mm etching equipment and Endura® platform
- Temperature Resistance: Up to 800°C, adapting to high-temperature plasma process
- Surface Roughness: Ra <0.8 μm, smooth surface to reduce particle adhesion
- Service Life: 500–800 process hours (related to process conditions)
Functional Features:
- High-purity ceramic material, no metal pollution, ensuring wafer cleanliness
- Yttria coating has strong resistance to fluorine and chlorine plasma erosion
- Precision machining, tight fit with the chamber, no gap to avoid particle retention
- Simple installation and replacement, reducing equipment downtime
- Good thermal conductivity and thermal stability, adapting to frequent temperature changes
- Suitable for both metal etching and dielectric etching processes
Application Scenarios:
- Dielectric etching process such as shallow trench isolation and interlayer dielectric
- Metal etching of aluminum, copper and other interconnect structures
- High-density plasma etching equipment for 3D NAND and advanced logic devices
- Plasma cleaning process between wafer batches
- Semiconductor etching equipment for advanced process nodes below 7nm
