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AMAT 0100-91085
Product Name: RF Power Supply Generator (13.56 MHz)
Product Introduction: A high-precision Radio Frequency (RF) generator designed to deliver stable power to plasma chambers. It is a core component for generating and sustaining plasma in etching and deposition processes.
Technical Specifications:
- Frequency: 13.56 MHz (standard industrial frequency).
- Power Output: 1000 Watts to 5000 Watts (configurable).
- Voltage: 208V/230V/400V AC three-phase input.
Detailed content
- Impedance: 50 Ohms standard.
- Harmonic Distortion: Less than 1% (low noise generation).
- Reflected Power Tolerance: Up to 100% mismatch for short durations without damage.
Functional Features: - Auto-Match Integration: Capable of communicating with external impedance match networks for real-time load tuning.
- Pulse Modulation: Supports RF pulsing capabilities for ion energy control (up to 10kHz pulse rates).
- Digital Control: Features a touchscreen interface and remote communication via SECS/GEM protocols.
- Protection Circuits: Includes over-voltage, over-current, over-temperature, and arc detection shutdown systems.
Application Scenarios: - Plasma Etching: Powers the plasma in ICP (Inductively Coupled Plasma) and CCP (Capacitively Coupled Plasma) sources.
- PVD Sputtering: Provides the energy to ionize sputtering gas (Argon) to dislodge target material.
- PECVD: Generates plasma to enhance chemical reactions for film deposition at lower temperatures.
- Ion Implantation: Used in plasma immersion ion implantation systems.
