Digital guide
You are here:
AMAT 0100-66026
Product Introduction: This plasma etching system is a core piece of equipment in semiconductor manufacturing, used to selectively remove material from the surface of semiconductor wafers to create the desired patterns and structures.
Technical Specifications:
- Uses a high – density plasma source to achieve fast and precise etching rates.
- Can control the etching process with high accuracy, adjusting parameters such as plasma power, gas flow rate, and pressure.
Detailed content
- Supports a wide range of etching gases, including chlorine – based, fluorine – based, and oxygen – based gases.
Functional Features:
- High – Precision Etching: The advanced plasma technology allows for the creation of very fine and complex patterns on semiconductor wafers with high accuracy.
- Process Flexibility: The ability to use different etching gases and adjust various parameters makes the system suitable for a wide range of semiconductor materials and applications.
- Fast Etching Rates: The high – density plasma source enables fast material removal, increasing the overall production efficiency.
Application Scenarios:
- Used in the production of microprocessors, memory chips, and other integrated circuits to create the transistor structures and interconnects.
- Employed in the fabrication of optoelectronic devices such as lasers and photodetectors for precise patterning of the active regions.
- Integral part of MEMS (Micro – Electro – Mechanical Systems) manufacturing for creating micro – mechanical structures on semiconductor wafers.
