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AMAT 0100-00195
Product Name: Advanced Sputtering Target Assembly for Physical Vapor Deposition (PVD) Systems
Product Introduction:
This component is a critical spare part designed for Applied Materials’ Endura series or similar PVD platforms. It functions as the source material (target) which is bombarded by ions to eject atoms that then deposit onto a semiconductor wafer. This specific part number typically refers to a specialized target assembly, often involving complex bonding interfaces for thermal management and structural integrity during high-power sputtering processes. It is engineered for the deposition of conductive barrier layers or seed layers in copper interconnect fabrication.
Detailed content
Technical Specifications:
- Material Composition: Typically Titanium Tungsten (TiW), Tantalum (Ta), or Cobalt (Co) alloys depending on specific process requirements.
- Dimensions: Usually configured for 200mm or 300mm wafer compatibility (e.g., outer diameter approx. 330mm for 300mm targets).
- Bonding Type: Indium-based solder bonding or diffusion bonding for high thermal conductivity.
- Purity Level: 99.999% (5N) or higher to prevent contamination in the semiconductor channel.
- Operating Temperature: Capable of withstanding operational temperatures ranging from 20°C to 600°C during processing.
- Cooling Mechanism: Integrated internal channels for high-flow water cooling to maintain thermal stability.
Functional Features:
- High Uniformity: Engineered to provide extremely uniform film thickness across the entire wafer surface, crucial for advanced process nodes.
- Erosion Resistance: Designed with specific grain structures to ensure consistent sputtering rates and predictable target life.
- Low Particle Generation: Special surface finishing processes minimize the generation of particles that could cause yield loss in the fab.
- RF Compatibility: Optimized for RF sputtering sources to maintain stable plasma ignition and density.
- Interchangeability: Designed for quick-swap maintenance to minimize tool downtime (Match-point design).
Application Scenarios:
- Copper Metallization: Used as a barrier layer (e.g., Ta/TaN) or seed layer (Cu) deposition in dual-damascene processes.
- Logic and Memory Devices: Essential for manufacturing 7nm, 5nm, and 3nm logic chips as well as 3D NAND flash memory.
- DRAM Manufacturing: Deposition of capacitor electrodes or barrier layers in dynamic random-access memory production.
- Advanced Packaging: Used in Through-Silicon Via (TSV) and wafer-level packaging (WLP) processes for redistribution layers (RDL).
