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- Product Introduction: This mass flow controller is a key component in semiconductor process gas delivery systems. It is used to precisely control the flow rate of process gases, which is crucial for maintaining consistent process conditions and ensuring the quality and reliability of semiconductor devices. The mass flow controller can accurately measure and regulate the gas flow within a specified range, regardless of changes in pressure or temperature.
- Technical Specifications:
- Flow Range: Can handle a wide flow range, from very low flow rates in the sccm (standard
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- cubic centimeters per minute) range for some specialized processes to higher flow rates in the slm (standard liters per minute) range for larger – scale processes.
- Accuracy: Has high flow accuracy, typically within ±1% of the set flow rate or better. This level of accuracy is necessary to ensure that the correct amount of gas is delivered to the process chamber for precise chemical reactions and material deposition.
- Response Time: Has a relatively fast response time, usually within a few milliseconds, to changes in the set flow rate. This allows for quick adjustments in the gas flow during the process, such as when switching between different process steps or responding to changes in process conditions.
- Functional Features:
- Closed – loop Control: Uses a closed – loop control system that continuously measures the actual gas flow and compares it to the set flow rate. Any differences are used to adjust the control valve to maintain the desired flow rate. This ensures accurate and stable gas flow over time.
- Multi – gas Compatibility: Can be used with a variety of process gases, including inert gases such as nitrogen and argon, as well as reactive gases such as hydrogen, oxygen, and silane. It is designed to be chemically resistant to these gases and to provide accurate flow control for each type.
- Communication Interface: Equipped with a communication interface, such as RS – 232, RS – 485, or Ethernet, to allow for remote monitoring and control of the gas flow. This enables integration with the overall fab control system for centralized process management.
- Application Scenarios: Installed in the process gas lines of semiconductor fabs, upstream of the process chambers. It is used in various processes such as chemical vapor deposition (CVD), where precise control of the gas flow is necessary for the deposition of thin films with uniform thickness and composition. In etching processes, it ensures that the correct amount of etchant gas is delivered to achieve the desired etching rate and profile.
