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AMAT 0040-89644 RF Match Network Assembly
Product Introduction: This is a high-performance automatic radio frequency impedance matching network for plasma process equipment. It can automatically adjust the impedance between the RF power supply and the plasma load in real time, minimize the reflected power, maximize the energy transfer efficiency, ensure the stable ignition and uniform distribution of plasma, and directly affect the process uniformity, repeatability and equipment stability of etching and deposition.
Technical Specifications:
- Working Frequency: 13.56 MHz standard industrial RF frequency
Detailed content
- Power Capacity: 0–5 kW continuous working, with short-time overload capacity
- Impedance Matching Range: 1–1000 Ω, adapting to various plasma load changes
- Adjustment Response Time: <50 ms, realizing fast tracking of load changes
- VSWR: <1.1:1 under matching state, with high matching efficiency
- Cooling Mode: Forced air cooling, ensuring stable performance under high power
- Protection Level: IP54, adapting to dust and humidity environment in the factory
Functional Features:
- Microprocessor automatic control, with high-precision and high-speed adjustment ability
- Low insertion loss, high energy utilization rate, reducing energy consumption
- Complete over-voltage, over-current, over-temperature protection, improving equipment safety
- Support SECS/GEM communication protocol, convenient for equipment automation integration
- Real-time monitoring of reflected power, forward power and working status
- Compact structure, easy to install in the RF feed-in line of the process chamber
Application Scenarios:
- Plasma enhanced chemical vapor deposition (PECVD) equipment
- Reactive ion etching (RIE), inductively coupled plasma (ICP) etching equipment
- RF sputtering coating equipment for metal and dielectric films
- Plasma cleaning and surface treatment equipment
- Semiconductor equipment for advanced processes such as 3D NAND and DRAM
