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AMAT 0040-62413

  • Product Name: Liner, Lower Chamber, Silicon Carbide (SiC)
  • Product Description: High-performance silicon carbide liner for lower chamber regions requiring extreme wear and chemical resistance in semiconductor processing.
  • Technical Specifications:
    • Material: Sintered alpha-phase silicon carbide (SiC)

Detailed content

    • Density: 3.10g/cm³ (98% theoretical density)
    • Hardness: 2,800 Vickers
    • Temperature Resistance: Up to 1,500°C in oxidizing environments
    • Wall Thickness: 4.0mm ±0.08mm
    • Surface Finish: Ground to Ra ≤ 0.5μm
  • Functional Features:
    • Unmatched resistance to plasma erosion and chemical corrosion
    • Extreme hardness prevents wear from wafer contact
    • Low particle generation characteristics
    • Excellent thermal conductivity for uniform heat distribution
    • Non-porous structure eliminates contamination risks
  • Application Scenarios:
    • Used in AMAT Producer and Centura high-temperature chambers
    • Applied in silicon carbide and dielectric deposition processes
    • Deployed in high-erosion regions of etch chambers
    • Utilized in 300mm wafer manufacturing platforms
    • Suitable for processes involving high-power plasma exposure

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