AMAT 0040-62413
- Product Name: Liner, Lower Chamber, Silicon Carbide (SiC)
- Product Description: High-performance silicon carbide liner for lower chamber regions requiring extreme wear and chemical resistance in semiconductor processing.
- Technical Specifications:
- Material: Sintered alpha-phase silicon carbide (SiC)
Detailed content
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- Density: 3.10g/cm³ (98% theoretical density)
- Hardness: 2,800 Vickers
- Temperature Resistance: Up to 1,500°C in oxidizing environments
- Wall Thickness: 4.0mm ±0.08mm
- Surface Finish: Ground to Ra ≤ 0.5μm
- Functional Features:
- Unmatched resistance to plasma erosion and chemical corrosion
- Extreme hardness prevents wear from wafer contact
- Low particle generation characteristics
- Excellent thermal conductivity for uniform heat distribution
- Non-porous structure eliminates contamination risks
- Application Scenarios:
- Used in AMAT Producer and Centura high-temperature chambers
- Applied in silicon carbide and dielectric deposition processes
- Deployed in high-erosion regions of etch chambers
- Utilized in 300mm wafer manufacturing platforms
- Suitable for processes involving high-power plasma exposure










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