AMAT) 0040-50608

• • Wall Thickness: 6mm ± 0.1mm
  • Temperature Resistance: Up to 1,100°C
  • Purity: 99.995% SiO₂ with minimal metallic impurities
  • Dimensions: Precision-formed to match chamber geometry
• Functional Features:
  • Excellent resistance to fluorine and chlorine plasma chemistries
  • High thermal shock resistance for rapid thermal cycling
  • Non-porous surface prevents particle entrapment
  • Transparent to IR radiation for process monitoring
  • Easy to remove and replace during maintenance
• Application Scenarios:
  • Used in AMAT DPS II and MxP etch chambers
  • Applied in high-density plasma etch processes
  • Deployed in dielectric etch applications
  • Utilized in advanced semiconductor manufacturing
  • Suitable for processes requiring high chemical purity and temperature resistance