Digital guide
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Detailed content
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- Surface Finish: Electropolished internal surfaces (Ra ≤ 0.5μm)
- Structural Integrity: Designed for 150°C operating temperature
- Sealing Interface: Precision-machined for metal C-seal compatibility
- Weight: 48kg (optimized for structural rigidity vs. weight)
- Functional Features:
- Enhanced thermal stability for advanced process control
- Optimized gas flow dynamics for improved process uniformity
- Reduced contamination risk through superior surface finish
- Integrated cooling channels for precise temperature management
- Compatible with high-power RF plasma sources
- Application Scenarios:
- Used exclusively in AMAT ASP+ etch systems
- Applied in advanced dielectric etch applications
- Deployed in high-volume semiconductor manufacturing
- Utilized in 300mm wafer fabrication processes
- Suitable for advanced node semiconductor manufacturing (≤14nm)
