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AMAT 0040-21402 Precision Gas Delivery Manifold
Product Overview: The AMAT 0040-21402 is a precision gas delivery manifold designed for use in the gas path systems of Applied Materials semiconductor equipment. It is responsible for the precise transportation, distribution, and control of process gases, ensuring that the correct gas composition and flow rate are delivered to the process chamber during semiconductor manufacturing. This manifold is engineered with high-purity materials and precision machining to minimize gas adsorption, particle generation, and leakage, making it a critical component for maintaining process consistency and wafer quality.
Technical Specifications: – Material Composition: Manifold body made of high-purity 316L stainless steel (ASTM A240) with electropolished internal surface (surface roughness ≤ 0.1 μm) to prevent gas adsorption and particle generation.
Detailed content
– Gas Compatibility: Compatible with a wide range of process gases, including inert gases (Ar, N₂), reactive gases (SiH₄, NH₃, H₂), and corrosive gases (CF₄, Cl₂, HF). – Flow Control Accuracy: ±1% of full scale (FS) for flow rates ranging from 1 sccm to 1000 sccm, compatible with AMAT’s mass flow controllers (MFCs). – Pressure Rating: Maximum operating pressure: 10 MPa (1450 psi), with a burst pressure of 30 MPa (4350 psi) for safety. – Connection Type: Swagelok tube fittings (1/4 inch or 3/8 inch) for leak-tight connections, with a leak rate ≤ 1×10⁻⁹ Pa·m³/s (He). – Operating Temperature: -20°C to 80°C, with a thermal expansion coefficient of 16.5×10⁻⁶ /°C (20-50°C). – Dimensions: 200mm (L) × 150mm (W) × 80mm (H), weight: 1.2kg, with a compact design to fit into tight equipment spaces. – Certification: Complies with SEMI F11 standards for gas delivery components and ISO 9001 quality control requirements.
Functional Features: – Distributes process gases from a single inlet to multiple outlets, ensuring uniform flow distribution to different parts of the process chamber. – Works in conjunction with mass flow controllers (MFCs) to precisely regulate gas flow rates, maintaining consistent process parameters. – Minimizes dead volume and gas trapping, reducing the risk of gas mixing and contamination between process steps. – Prevents gas backflow with built-in check valves, ensuring the integrity of the gas path system. – Resists chemical corrosion from reactive and corrosive process gases, extending component service life (typical service life: 15,000+ operational hours). – Features a modular design, allowing for easy integration with additional gas channels or components as needed. – Enables quick purging of the gas path, reducing process downtime between wafer lots.
Application Scenarios: – Installed in AMAT’s CVD, PECVD, and etching systems, as well as ion implantation and atomic layer deposition (ALD) equipment. – Used in the gas delivery systems of 200mm and 300mm wafer manufacturing lines, including logic chips, memory chips, and power semiconductor devices. – Applied in processes requiring precise gas control, such as thin film deposition, plasma etching, and surface modification. – Suitable for semiconductor fabs with strict process control requirements, where gas composition and flow rate accuracy are critical to wafer quality. – Ideal for high-volume production lines, where equipment uptime and process consistency are essential. – Used in research and development laboratories for developing new gas-based semiconductor processes.
