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AMAT 0040-20124 Ceramic Heater Pedestal Assembly
Product Description: A high-performance heating component designed for precise wafer temperature control in semiconductor processing chambers. Features advanced ceramic construction for excellent thermal uniformity and electrical isolation, critical for consistent thin-film deposition results.
Technical Specifications:
- Wafer Compatibility: 200mm (8-inch) semiconductor wafers
- Heating Element: Multi-zone embedded resistance heating elements
Detailed content
- Temperature Range: Ambient to 400°C operational range
- Temperature Uniformity: ±1.5°C across entire wafer surface
- Material: High-purity aluminum nitride (AlN) ceramic
- Thermal Conductivity: >180 W/m·K for rapid heat transfer
- Power Requirements: 480V AC, 3-phase, 6kW maximum power
- Mounting: Precision flange mounting with thermal isolation
- Weight: 3.2kg
Functional Features:
- Multi-zone independent temperature control for profile optimization
- Rapid heat-up and cool-down cycles for increased throughput
- Exceptional temperature uniformity for consistent process results
- Ceramic construction providing excellent thermal conductivity and electrical isolation
- Low particulate generation for ultra-clean processing environments
- Built-in overtemperature protection and thermal runaway prevention
- Compatibility with standard AMAT chamber designs
Application Scenarios:
- Thermal oxide growth processes
- Photoresist baking and curing applications
- Wafer pre-heating for improved deposition uniformity
- Annealing processes for dopant activation
- Precision temperature control in LPCVD systems
- Wafer processing requiring tight temperature tolerance
