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AMAT 0040-01239
Product Name: Electrostatic Chuck (ESC) for Etch/Deposition Systems
Product Introduction: The 0040-01239 is an Electrostatic Chuck (ESC) assembly used in various Applied Materials process modules (both etch and deposition). The ESC is the platform on which the wafer sits inside the vacuum chamber. It uses electrostatic force (Coulomb or Johnsen-Rahbek effect) to hold the wafer firmly in place, even under high vacuum and during plasma bombardment. It also typically incorporates a helium backside cooling system to control wafer temperature.
Technical Specifications:
- System Compatibility: Multi-chamber platforms (e.g., DPS, Eterna)
Detailed content
- Wafer Size: 300mm (12-inch)
- Material: Ceramic (Aluminum Nitride – AlN) for high thermal conductivity
- Electrode Type: Monopolar or Bipolar
- Cooling Gas: Helium (He) backside cooling channels
- Clamping Voltage: 0 – 2000 VDC (adjustable)
Functional Features: - Precise Temperature Control: The AlN ceramic conducts heat efficiently from the wafer to the cooling channels, allowing for rapid temperature ramping and precise process control (-100°C to +200°C range possible).
- Wafer Clamping: Provides uniform clamping force across the wafer to prevent movement during high-energy ion bombardment.
- End-Point Detection Compatibility: Some ESCs include optical fibers for in-situ end-point detection of the process.
- Leakage Current Control: High-resistance paths prevent stray currents from damaging sensitive device structures.
Application Scenarios: - Plasma etching of silicon, oxides, and metals where wafer temperature control is critical for profile control.
- PVD sputtering where wafer heating from plasma bombardment must be managed.
- CVD processes requiring precise thermal budgets.
- High-aspect-ratio etching where any wafer movement would result in twisted profiles.
