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AMAT 0021-55107 High-Purity Gas Delivery Nozzle Assembly
Product Description: A precision-engineered gas delivery component designed for uniform distribution of process gases onto semiconductor wafers during thin-film deposition and etching processes. Manufactured with ultra-clean materials to meet the stringent contamination control requirements of advanced semiconductor manufacturing.
Technical Specifications:
- Material: High-purity 316L stainless steel with electropolished internal surfaces
- Surface Finish: Ra < 0.4μm for minimal particle entrapment
Detailed content
- Number of Orifices: 48 precision-drilled gas distribution holes
- Orifice Diameter: 0.5mm ± 0.02mm uniform diameter
- Connection Type: 1/4″ VCR face-seal fitting for leak-tight installation
- Pressure Rating: Vacuum to 150psig operating pressure
- Temperature Resistance: -40°C to +200°C continuous operation
- Weight: 0.35kg
Functional Features:
- Uniform gas distribution across entire wafer surface
- Minimal dead volume to reduce gas waste and cross-contamination
- Easy installation and removal for maintenance and cleaning
- Chemical compatibility with all standard semiconductor process gases
- Low outgassing properties suitable for high-vacuum environments
- Reusable design with long service life between replacements
- Precision alignment features for consistent process results
Application Scenarios:
- Atomic layer deposition (ALD) processes requiring precise gas delivery
- Chemical vapor deposition (CVD) thin-film formation
- Etching processes with uniform reactive gas distribution
- Doping gas introduction for semiconductor manufacturing
- Process development and R&D environments
- High-volume production fabs requiring consistent process results
