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Technical Specifications:
- Material: Silicon carbide (SiC) or high-grade aluminum
- Flatness: < 5 μm TTV (Total Thickness Variation)
- Surface Finish: Ground to Ra ≤ 0.8 μm
Functional Features:
- High thermal conductivity to dissipate heat efficiently
- Resistant to plasma erosion and sputtering
- Precision profile ensures uniform edge processing and minimizes micro-arcing
- Secure mechanical retention of internal chamber components
Application: Installed in PVD and Etch chambers surrounding the wafer pedestal to ensure process uniformity and protect underlying parts.
