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Technical Specifications:
- Material: Silicon Carbide (SiC) or high-purity alumina (Al₂O₃)
- Outer Diameter: 370 mm (for 300mm wafers)
- Flatness: < 8 μm TTV
- Surface Finish: Ground & polished (Ra ≤ 0.8 μm)
Functional Features:
- Exceptional plasma and chemical erosion resistance
- High thermal conductivity for uniform heat distribution
- Low particle emission design
- Precision lip for secure component alignment
Application: Used in dielectric etch and PVD chambers to improve process uniformity and protect the ESC.
