Digital guide
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Technical Specifications:
- Material: Silicon carbide (SiC) or high‑purity alumina ceramic
- Flatness: Total Thickness Variation <8μm
- Surface Finish: Ra ≤0.8μm
- Temperature Resistance: Up to 600°C
- Compatibility: 200mm/300mm wafer process chambers
Functional Features:
- High resistance to plasma sputtering and chemical corrosion
- Uniform thermal conductivity to stabilize process temperature
- Precision profile to improve wafer edge processing uniformity
- Low particle emission to enhance production yield
- Easy installation and replacement as a consumable part
Application: Installed in PVD and Etch chambers around the electrostatic chuck to improve process consistency.
