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AMAT 0020-70336
Product Description: A high-precision electrostatic chuck assembly designed for 300mm wafer clamping and thermal control in advanced semiconductor processing equipment. It uses Coulombic electrostatic force to securely hold wafers during deposition, etching, and annealing processes, while providing uniform temperature distribution across the wafer surface. The ESC is engineered for ultra-clean operation, low particle generation, and compatibility with UHP vacuum environments.
Technical Specifications:
– Wafer Compatibility: 300mm (12-inch) silicon wafers
– Chuck Type: Coulombic electrostatic chuck (ESC)
– Clamping Voltage: 0–3500V DC (adjustable)
Detailed content
– Temperature Control Range: 20°C to 500°C
– Temperature Uniformity: ±0.5°C across the wafer surface
– Heating Element: Embedded dual-zone resistive heater
– Cooling: Backside helium cooling (0–10 Torr pressure)
– Material: Aluminum nitride (AlN) ceramic top plate, 316L stainless steel base
– Surface Finish: Ra < 0.8 μm (polished top surface)
– Dimensions: 350mm diameter × 80mm height
– Weight: 6.5 kg
– Compliance: SEMI S2, CE, RoHS
Functional Features:
– Uniform electrostatic clamping with < 4% voltage variation across the wafer
– Dual-zone temperature control for precise edge-to-center thermal uniformity
– Low particle generation (Class 1 cleanroom compatible)
– Excellent thermal conductivity (AlN ceramic) for rapid heat transfer
– DC biasing capability to optimize plasma process performance
– Compatibility with AMAT Centura and Endura 300mm process platforms
– Long service life with minimal maintenance requirements
– Easy installation and removal for chamber maintenance
Application Scenarios:
– 300mm PVD chambers for metal deposition (Al, Cu, Ti, Ta)
– 300mm CVD and ALD chambers for dielectric film growth (SiO₂, Si₃N₄, HfO₂)
– 300mm etch chambers for dielectric and metal etching processes
– Ion implantation systems for 300mm wafer clamping during doping
– Rapid Thermal Processing (RTP) systems for 300mm wafer annealing
