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AMAT 0020-35625 Precision Gas Flow Control Module
Product Introduction: This high-precision gas flow control component is an indispensable core part in semiconductor manufacturing equipment, specially developed for ultra-clean and high-stability process gas delivery. It can achieve real-time closed-loop regulation of various process gases in complex vacuum and atmospheric environments, effectively ensuring the consistency and repeatability of key processes such as deposition, etching, and doping. It is widely used in high-end semiconductor process equipment, directly affecting wafer yield, film uniformity and device performance, and is a key component to support advanced process nodes below 10nm.
Technical Specifications:
- Operating Pressure Range: 0.1–100 Torr, compatible with high vacuum and low vacuum environment
Detailed content
- Flow Control Accuracy: ±0.5% of full-scale reading, with long-term stability and zero drift
- Material Construction: 316L electropolished stainless steel, PTFE and Kalrez® high-performance seals, resistant to corrosion of various process gases
- Temperature Range: -20°C to 120°C, adapting to different process temperature conditions
- Response Time: <100 ms, realizing fast and stable flow adjustment
- Connection Mode: VCR metal face seal fitting, ensuring ultra-low leakage rate
- Leakage Rate: <10⁻⁹ atm·cc/s He, meeting the strict vacuum sealing requirements of semiconductor equipment
Functional Features:
- Adopt closed-loop feedback control system, with real-time flow monitoring and automatic compensation function
- Built-in temperature and pressure sensor, can realize multi-parameter real-time monitoring and fault self-diagnosis
- Low internal volume design, reducing gas residence time and cross-contamination risk
- Support multiple gas types, including inert gas, corrosive gas and reactive gas
- High stability and long service life, reducing the frequency of calibration and replacement
- Compact structure, easy to install and integrate into the gas distribution system
Application Scenarios:
- Chemical Vapor Deposition (CVD) and Plasma Enhanced CVD (PECVD) equipment
- Plasma etching, reactive ion etching and other wafer patterning processes
- Atomic Layer Deposition (ALD) system for ultra-thin film growth
- Thermal oxidation, diffusion and annealing process equipment
- High-purity gas delivery and control system in semiconductor wafer manufacturing plant
