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AMAT 0020-33527
Product Name: Ceramic Chamber Isolation Shield
Product Description: High-performance ceramic shield for electrical isolation and plasma containment in semiconductor etch chambers.
Technical Specifications:
- Material: High-purity boron nitride (BN) composite ceramic
- Dielectric Constant: 4.1 at 1MHz
Detailed content
- Volume Resistivity: ≥10¹⁴ Ω·cm
- Maximum Operating Temperature: 800°C
- Dimensions: Precision-machined to chamber specifications
- Surface Finish: Ground to Ra ≤ 1.6μm
Functional Features:
- Superior electrical isolation for chamber components
- Excellent thermal conductivity for uniform heat distribution
- Non-contaminating material composition
- Resistance to plasma erosion and chemical corrosion
- Low dielectric loss for high-frequency applications
Application Scenarios:
- Electrical isolation in DPS etch chambers
- Plasma containment in reactive ion etching systems
- High-temperature semiconductor etch processes
- Centura platform chamber isolation components
