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AMAT 0020-28158

Product Name: High-Precision Digital Mass Flow Controller (MFC)

Product Introduction:
This device is a critical component of the Gas Delivery System (GDS) in semiconductor manufacturing equipment.114. It is designed to measure and control the flow of process gases with extremely high accuracy and repeatability. The MFC uses thermal mass flow sensing technology to measure the flow rate and a proportional control valve to regulate it. This specific unit is engineered for corrosive and non-corrosive gases, ensuring that the precise stoichiometry required for thin-film deposition and etching is maintained. It features digital communication for real-time monitoring and closed-loop control.

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Detailed content

Technical Specifications:

  • Gas Compatibility: Corrosive (Cl2, HBr, BCl3, WF6) and Non-Corrosive (Ar, N2, He, O2, H2, CF4) gases.
  • Flow Range: Various ranges available (e.g., 10 sccm, 50 sccm, 200 sccm, 1000 sccm, 5000 sccm); calibrated for specific gas.
  • Accuracy: ±0.5% of Reading or ±0.2% of Full Scale (whichever is greater).
  • Repeatability: ±0.1% of Full Scale.
  • Response Time: Typically < 1 second (95% step change).
  • Pressure Rating: Up to 3000 psig (inlet) and 15 psig (outlet) depending on the model.
  • Materials of Construction: 316L Stainless Steel body; seals made of Kalrez, Viton, or EPDM; wetted parts electropolished.
  • Electrical Interface: 24 VDC power; analog signal (0-5V or 4-20mA) or digital protocol (DeviceNet, Profibus, Modbus) for setpoint and readback.

Functional Features:

  • Digital Closed-Loop Control: Onboard microprocessor adjusts the control valve in real-time based on the sensor feedback to maintain the exact setpoint flow rate regardless of downstream pressure fluctuations.
  • Multi-Gas/Multi-Range: Capable of storing multiple gas calibration curves (K-factors), allowing one physical device to be used for different gases by changing the software configuration.
  • On-Board Diagnostics: Monitors health parameters such as valve drive, sensor stability, and temperature, providing predictive maintenance alerts to the host system.
  • Pressure Compensation: Built-in algorithms compensate for changes in inlet pressure to maintain stable flow control.
  • High Purity Design: All wetted surfaces are treated to minimize outgassing and particle generation; internal filtration is often integrated.

Application Scenarios:

  • Chemical Vapor Deposition (CVD): Precise control of precursor gases (e.g., SiH4, NH3, WF6) to control film stoichiometry and deposition rate.
  • Plasma Etch: Regulating etchant gases (CF4, Cl2) and passivation gases (C4F8) to control etch selectivity and profile.
  • Ion Implantation: Controlling the flow of dopant gases (BF3, PH3, AsH3) for precise doping profiles.
  • Rapid Thermal Processing (RTP): Managing ambient gases (N2, O2) during annealing processes.
  • Cleaning Processes: Regulating cleaning chemistries (NF3, O2) for in-situ chamber cleaning.

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