Detailed content
-
- Outer Diameter: 340mm
- Inner Diameter: 305mm
- Thickness: 12.0mm ±0.05mm
- Resistivity: 1-5 ohm-cm
- Surface Finish: Double-side polished (Ra ≤ 0.03μm)
- Functional Features:
- Precision machined for optimal plasma focusing
- Matches thermal expansion characteristics of silicon wafers
- High purity prevents metallic contamination
- Uniform electrical conductivity ensures consistent plasma properties
- Low defect structure minimizes particle generation
- Application Scenarios:
- Used in AMAT Centura etch systems
- Applied in dielectric and poly-silicon etch processes
- Deployed in 200mm wafer manufacturing environments
- Utilized in gate etch and contact etch applications
- Suitable for advanced semiconductor device fabrication











