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AMAT 0020-22801
Product Name: Producer GT CVD Precursor Gas Distribution Manifold
Product Introduction: The 0020-22801 is a specialized gas delivery manifold designed for the Applied Materials Producer GT CVD system. This system is often used for high-throughput dielectric deposition. The manifold distributes reactive gases evenly across the 300mm wafer surface. It is a critical component for controlling film uniformity, deposition rate, and film quality. The internal flow paths are engineered to handle aggressive chemistries without corroding or generating particles.
Technical Specifications:
- Equipment Match: Applied Materials Producer GT CVD Chamber
Detailed content
- Material: 316L Stainless Steel, Electropolished (EP) internal finish
- Gas Inlets: Multiple inlets for precursor, reactant, and carrier gases (e.g., N2O, NH3, SiH4)
- Outlet Configuration: Showerhead faceplate with optimized orifice sizing
- Thermal Spec: Operates at elevated temperatures (300°C – 500°C)
Functional Features: - CFD Optimized Geometry: Internal channels are shaped to ensure equal pressure drop across all injection points, guaranteeing film uniformity < 1%.
- Chemical Resistance: Passivated surfaces resist attack from halogen-containing precursors and acids.
- Gettering Effect: The large surface area of the manifold acts as a getter, absorbing trace moisture or oxygen impurities before they reach the wafer.
- Modular Design: Allows for quick replacement or cleaning to reduce tool downtime during preventive maintenance.
Application Scenarios: - High-throughput deposition of silicon nitride (SiN) for spacer etch and anti-reflection coating (ARC) layers.
- Deposition of oxides for inter-layer dielectrics (ILD).
- Processes requiring high step coverage in high-aspect-ratio features.
- Automotive and industrial semiconductor manufacturing where film reliability is paramount.
