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AMAT 0020-20726 Ceramic Wafer Support Pedestal
Product Overview: The AMAT 0020-20726 is a high-precision ceramic wafer support pedestal designed for Applied Materials semiconductor processing equipment. It provides stable, uniform support for wafers during etching, deposition, and thermal processing, ensuring consistent process conditions across the wafer surface. Manufactured from high-purity alumina ceramic, this pedestal delivers exceptional thermal stability, plasma resistance, and dimensional accuracy for advanced wafer processing.
Technical Specifications:
- Material: 99.99% high-purity alumina (Al₂O₃) ceramic, with a porous surface for vacuum chucking.
- Dimensions: Diameter 300mm, thickness 20mm, with precision-machined wafer locating notches.
Detailed content
- Surface Finish: Ground and polished to Ra ≤ 0.1μm, with a controlled porous structure (10–15% porosity).
- Temperature Resistance: Continuous operating temperature up to 1200°C, short-term peak up to 1400°C.
- Thermal Conductivity: 35 W/m·K, ensuring uniform heat distribution across the wafer.
- Dimensional Tolerance: ±0.005mm for diameter and flatness (≤0.01mm total indicator reading).
- Vacuum Chucking: Integrated vacuum channels for secure wafer holding, with a vacuum level of 0.8–0.95 bar.
- Certification: Complies with SEMI F17 ceramic component standards.
Functional Features:
- Provides stable, uniform wafer support, ensuring consistent process conditions.
- Delivers uniform heat distribution, eliminating thermal gradients across the wafer.
- Resists plasma erosion and chemical attack, extending service life up to 10,000 process hours.
- Maintains dimensional stability under extreme thermal cycling, ensuring consistent performance.
- Integrated vacuum chucking ensures secure wafer holding during high-speed processing.
- Minimizes particle generation, with a smooth, non-contaminating surface.
Application Scenarios:
- Installed in AMAT etch, CVD, and PVD chambers for 300mm wafer processing.
- Used in advanced logic and memory manufacturing processes (≤7nm nodes).
- Applied in processes requiring precise temperature control and wafer uniformity.
- Ideal for high-volume fabs where wafer yield and process consistency are critical.
- Deployed in R&D facilities for advanced wafer processing development.
