Digital guide
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AMAT 0020-04834
- Brand & Part Number: Applied Materials (AMAT) 0020-04834
- Product Name: Silicon Carbide (SiC) Process Ring
- Product Description: A high-performance silicon carbide process ring for semiconductor etch and deposition chambers. It offers exceptional hardness, wear resistance, and thermal stability in aggressive plasma environments.
Detailed content
- Technical Specifications:
- Material: High-purity sintered silicon carbide (SiC)
- Hardness: ≥ 2,800 HV (Vickers)
- Thermal Conductivity: ≥ 120 W/m·K
- Maximum Operating Temperature: 1,600°C
- Density: ≥ 3.15 g/cm³
- Surface Finish: Ground to Ra ≤ 0.8 μm
- Porosity: < 0.1% (closed porosity)
- Functional Features:
- Extreme plasma and chemical erosion resistance
- Exceptional hardness for long service life
- High thermal conductivity for efficient heat dissipation
- Non-contaminating ultra-high purity composition
- Excellent thermal shock resistance
- Dimensional stability under extreme thermal cycling
- Applications:
- Focus rings and confinement rings in plasma etch chambers
- High-temperature process rings in PVD and CVD systems
- AMAT Centura etch and dielectric deposition platforms
