Digital guide
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AMAT 0020-01964
- Brand & Part Number: Applied Materials (AMAT) 0020-01964
- Product Name: Silicon Carbide (SiC) Shield Ring
- Product Description: A high-performance silicon carbide shield ring for plasma process chambers. It offers exceptional erosion resistance, thermal stability, and purity for advanced semiconductor etching and deposition applications.
Detailed content
- Technical Specifications:
- Material: Sintered alpha-phase silicon carbide (SiC)
- Hardness: ≥ 2,800 HV (Vickers)
- Thermal Conductivity: ≥ 130 W/m·K
- Maximum Operating Temperature: 1,600°C
- Density: ≥ 3.16 g/cm³
- Surface Finish: Precision ground to Ra ≤ 0.8 μm
- Porosity: < 0.1% closed porosity
- Functional Features:
- Extreme resistance to plasma erosion and chemical corrosion
- Superior thermal conductivity dissipates process heat efficiently
- High dimensional stability maintains process uniformity
- Non-contaminating ultra-high purity composition
- Excellent thermal shock resistance during rapid process cycling
- Extended service life reduces maintenance frequency
- Applications:
- Shield rings in high-density plasma etch chambers
- High-temperature process rings in PVD and CVD systems
- AMAT Centura etch platforms (MXP+ etch systems)
- Advanced node semiconductor manufacturing (≤ 45nm)
